Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPP024N06N3GHKSA1
BESCHREIBUNG
MOSFET N-CH 60V 120A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 120A (Tc) 250W (Tc) Through Hole PG-TO220-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500

Technische Daten

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 196µA
Gate Charge (Qg) (Max) @ Vgs
275 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
23000 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Base Product Number
IPP024N

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPP024N06N3GHKSA1

Dokumente und Medien

Datasheets
1(IPB021N06N3, IPI024N06N3, IPP024N06N3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPB021N06N3, IPI024N06N3, IPP024N06N3 G)

Menge Preis

-

Stellvertreter

Teil Nr. : IPP024N06N3GXKSA1
Hersteller. : Rochester Electronics, LLC
Verfügbare Menge. : 400
Einzelpreis. : $2.94000
Ersatztyp. : Direct
Teil Nr. : FDP025N06
Hersteller. : onsemi
Verfügbare Menge. : 64
Einzelpreis. : $4.70000
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Hersteller. : Nexperia USA Inc.
Verfügbare Menge. : 4,251
Einzelpreis. : $3.63000
Ersatztyp. : Similar
Teil Nr. : SUM50020E-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 0
Einzelpreis. : $2.78000
Ersatztyp. : Similar