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ChinaNJL4281DG
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NJL4281DG
BESCHREIBUNG
TRANS NPN 350V 15A TO264
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN + Diode (Isolated) 350 V 15 A 35MHz 230 W Through Hole TO-264
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
25
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
Transistor Type
NPN + Diode (Isolated)
Current - Collector (Ic) (Max)
15 A
Voltage - Collector Emitter Breakdown (Max)
350 V
Vce Saturation (Max) @ Ib, Ic
1V @ 800mA, 8A
Current - Collector Cutoff (Max)
100µA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5A, 5V
Power - Max
230 W
Frequency - Transition
35MHz
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-264-5
Supplier Device Package
TO-264
Base Product Number
NJL4281
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
2156-NJL4281DG-ON
ONSONSNJL4281DG
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi NJL4281DG
Dokumente und Medien
Datasheets
1(NJL4281,4302D)
Environmental Information
1(onsemi RoHS)
PCN Obsolescence/ EOL
1(Multiple Devices 30/Mar/2012)
HTML Datasheet
1(NJL4281,4302D)
Menge Preis
-
Stellvertreter
Teil Nr. : NJL3281DG
Hersteller. : onsemi
Verfügbare Menge. : 132
Einzelpreis. : $7.14000
Ersatztyp. : Similar
Verfügbare Menge. : 132
Einzelpreis. : $7.14000
Ersatztyp. : Similar