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ChinaSI1304BDL-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI1304BDL-T1-GE3
BESCHREIBUNG
MOSFET N-CH 30V 900MA SC70-3
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 900mA (Tc) 340mW (Ta), 370mW (Tc) Surface Mount SC-70-3
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
270mOhm @ 900mA, 4.5V
Vgs(th) (Max) @ Id
1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.7 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
100 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
340mW (Ta), 370mW (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-70-3
Package / Case
SC-70, SOT-323
Base Product Number
SI1304
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
SI1304BDL-T1-GE3DKR
SI1304BDLT1GE3
SI1304BDL-T1-GE3TR
SI1304BDL-T1-GE3CT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI1304BDL-T1-GE3
Dokumente und Medien
Datasheets
1(SI1304BDL)
Environmental Information
()
PCN Obsolescence/ EOL
1(SIL-0632014 16/Apr/2014)
HTML Datasheet
1(SI1304BDL)
Menge Preis
-
Stellvertreter
Teil Nr. : SI1308EDL-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 46,892
Einzelpreis. : $0.44000
Ersatztyp. : Similar
Verfügbare Menge. : 46,892
Einzelpreis. : $0.44000
Ersatztyp. : Similar