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ChinaSUP53P06-20-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SUP53P06-20-GE3
BESCHREIBUNG
MOSFET P-CH 60V 9.2A/53A TO220AB
DETAILIERTE BESCHREIBUNG
P-Channel 60 V 9.2A (Ta), 53A (Tc) 3.1W (Ta), 104.2W (Tc) Through Hole TO-220AB
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
SUP53P06-20-GE3 Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
9.2A (Ta), 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
19.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
115 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 104.2W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SUP53
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SUP53P06-20-GE3
Dokumente und Medien
Datasheets
1(SUP53P06-20)
EDA Models
1(SUP53P06-20-GE3 Models)
Menge Preis
-
Stellvertreter
Teil Nr. : SUP53P06-20-E3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 3,532
Einzelpreis. : $2.80000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 3,532
Einzelpreis. : $2.80000
Ersatztyp. : Parametric Equivalent
Teil Nr. : SPP80P06PHXKSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 4,684
Einzelpreis. : $3.77000
Ersatztyp. : Similar
Verfügbare Menge. : 4,684
Einzelpreis. : $3.77000
Ersatztyp. : Similar