English
Spain
Rusia
Italy
ChinaBSO612CVGHUMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSO612CVGHUMA1
BESCHREIBUNG
MOSFET N/P-CH 60V 3A/2A 8DSO
DETAILIERTE BESCHREIBUNG
Mosfet Array 60V 3A, 2A 2W Surface Mount PG-DSO-8
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
3A, 2A
Rds On (Max) @ Id, Vgs
120mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs
15.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
340pF @ 25V
Power - Max
2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
PG-DSO-8
Base Product Number
BSO612
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
BSO612CVGHUMA1TR
BSO612CVGHUMA1DKR
2156-BSO612CVGHUMA1
BSO612CVXTINCT
BSO612CVXTINCT-ND
BSO612CVGXT
BSO612CVXTINTR-ND
BSO612CVT
BSO612CVGINTR-ND
BSO612CVGINTR
BSO612CVGINDKR-ND
BSO612CVGINCT-ND
INFINFBSO612CVGHUMA1
BSO612CVGT
BSO612CVXTINTR
BSO612CVGHUMA1CT
BSO612CVGINDKR
BSO612CV G
SP000216307
BSO612CVG
BSO612CV G-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies BSO612CVGHUMA1
Dokumente und Medien
Datasheets
1(BSO 612 CV G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSO 612 CV G)
Simulation Models
1(OptiMOS™ Power MOSFET 60V Complementary Spice Model)
Menge Preis
-
Stellvertreter
Teil Nr. : IRF7343TRPBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 24,772
Einzelpreis. : $1.13000
Ersatztyp. : Similar
Verfügbare Menge. : 24,772
Einzelpreis. : $1.13000
Ersatztyp. : Similar