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ChinaNVB190N65S3
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TEILNUMMER DES HERSTELLERS
NVB190N65S3
BESCHREIBUNG
MOSFET N-CH 650V 20A D2PAK-3
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 20A (Tc) 162W (Tc) Surface Mount TO-263 (D2PAK)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
SuperFET® III
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1605 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
162W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
NVB190
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NVB190N65S3
Dokumente und Medien
Environmental Information
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Menge Preis
-
Stellvertreter
Teil Nr. : NVB190N65S3F
Hersteller. : onsemi
Verfügbare Menge. : 752
Einzelpreis. : $3.83000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 752
Einzelpreis. : $3.83000
Ersatztyp. : Parametric Equivalent