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ChinaVQ1001P-2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
VQ1001P-2
BESCHREIBUNG
MOSFET 4N-CH 30V 0.83A 14DIP
DETAILIERTE BESCHREIBUNG
Mosfet Array 30V 830mA 2W Through Hole 14-DIP
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
4 N-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
830mA
Rds On (Max) @ Id, Vgs
1.75Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
110pF @ 15V
Power - Max
2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
-
Supplier Device Package
14-DIP
Base Product Number
VQ1001
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix VQ1001P-2
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