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ChinaFQP9P25
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQP9P25
BESCHREIBUNG
MOSFET P-CH 250V 9.4A TO220-3
DETAILIERTE BESCHREIBUNG
P-Channel 250 V 9.4A (Tc) 120W (Tc) Through Hole TO-220-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
FQP9P25 Models
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
620mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1180 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
120W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
FQP9
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FQP9P25FS
FQP9P25-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQP9P25
Dokumente und Medien
Datasheets
1(FQP9P25)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Parts obs 30/Jun/2022)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(MFG Site Addition 09/Mar/2020)
PCN Packaging
()
HTML Datasheet
1(TO220B03 Pkg Drawing)
EDA Models
1(FQP9P25 Models)
Product Drawings
1(TO220B03 Pkg Drawing)
Menge Preis
QUANTITÄT: 1000
Einzelpreis: $0.96732
Verpackung: Tube
MinMultiplikator: 1000
Verpackung: Tube
MinMultiplikator: 1000
Stellvertreter
-