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ChinaIKW03N120H
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IKW03N120H
BESCHREIBUNG
IGBT WITH ANTI-PARALLEL DIODE
DETAILIERTE BESCHREIBUNG
IGBT 1200 V 9.6 A 62.5 W Through Hole PG-TO247-3-21
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
226
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Bulk
Product Status
Active
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
9.6 A
Current - Collector Pulsed (Icm)
9.9 A
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 3A
Power - Max
62.5 W
Switching Energy
140µJ (on), 150µJ (off)
Input Type
Standard
Gate Charge
22 nC
Td (on/off) @ 25°C
9.2ns/281ns
Test Condition
800V, 3A, 82Ohm, 15V
Reverse Recovery Time (trr)
42 ns
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
PG-TO247-3-21
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
INFINFIKW03N120H
2156-IKW03N120H
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Infineon Technologies IKW03N120H
Dokumente und Medien
Datasheets
1(IKP03N120H2XKSA1)
Menge Preis
QUANTITÄT: 226
Einzelpreis: $1.33
Verpackung: Bulk
MinMultiplikator: 226
Verpackung: Bulk
MinMultiplikator: 226
Stellvertreter
-