Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRL8114PBF
BESCHREIBUNG
MOSFET N-CH 30V 90A TO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 90A (Tc) 115W (Tc) Through Hole TO-220AB
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000

Technische Daten

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2660 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
115W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRL8114

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

SP001550392
64-0104PBF-ND
64-0104PBF

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRL8114PBF

Dokumente und Medien

Datasheets
1(IRL8114PbF)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Mult Dev Label Chgs 8/Sep/2021)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRL8114PbF)
Simulation Models
1(IRL8114 Saber File)

Menge Preis

-

Stellvertreter

Teil Nr. : IPP042N03LGXKSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 238
Einzelpreis. : $1.43000
Ersatztyp. : Similar
Teil Nr. : FDP8874
Hersteller. : Rochester Electronics, LLC
Verfügbare Menge. : 2,840
Einzelpreis. : $0.88000
Ersatztyp. : Similar