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ChinaTRS16N65FB,S1F(S
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
TRS16N65FB,S1F(S
BESCHREIBUNG
DIODE ARR SIC SCHOTT 650V TO247
DETAILIERTE BESCHREIBUNG
Diode Array 1 Pair Common Cathode 650 V 8A (DC) Through Hole TO-247-3
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tube
Product Status
Active
Diode Configuration
1 Pair Common Cathode
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io) (per Diode)
8A (DC)
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 8 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
90 µA @ 650 V
Operating Temperature - Junction
175°C (Max)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247
Base Product Number
TRS16N65
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.10.0080
Andere Namen
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Kategorie
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Diode Arrays/Toshiba Semiconductor and Storage TRS16N65FB,S1F(S
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