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ChinaAPT28M120B2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APT28M120B2
BESCHREIBUNG
MOSFET N-CH 1200V 29A T-MAX
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 29A (Tc) 1135W (Tc) Through Hole T-MAX™ [B2]
HERSTELLER
Microchip Technology
STANDARD LEADTIME
43 Weeks
EDACAD-MODELL
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
Microchip Technology
Series
POWER MOS 8™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
560mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
300 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
9670 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1135W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
T-MAX™ [B2]
Package / Case
TO-247-3 Variant
Base Product Number
APT28M120
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
APT28M120B2MI-ND
APT28M120B2MI
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microchip Technology APT28M120B2
Dokumente und Medien
Datasheets
()
Environmental Information
()
PCN Assembly/Origin
1(Fab Site 27/Jul/2022)
HTML Datasheet
()
Product Drawings
1(T-MAX Front)
Menge Preis
QUANTITÄT: 100
Einzelpreis: $19.2625
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $23.73
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-