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TEILNUMMER DES HERSTELLERS
IRLS3813TRLPBF
BESCHREIBUNG
MOSFET N-CH 30V 160A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 160A (Tc) 195W (Tc) Surface Mount TO-263AB (D2PAK)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
800
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.95mOhm @ 148A, 10V
Vgs(th) (Max) @ Id
2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
83 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8020 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
195W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263AB (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IRLS3813
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SP001573098
IRLS3813TRLPBFDKR
IRLS3813TRLPBFCT
IRLS3813TRLPBFTR
IRLS3813TRLPBF-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLS3813TRLPBF
Dokumente und Medien
Datasheets
1(IRLS3813PbF)
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1(Mult Dev Label Chgs 8/Sep/2021)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRLS3813PbF)
Simulation Models
1(IRLS3813 Spice Model)
Menge Preis
-
Stellvertreter
Teil Nr. : IPB80N03S4L02ATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 0
Einzelpreis. : $1.40834
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $1.40834
Ersatztyp. : Similar