Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
FQU13N10LTU
BESCHREIBUNG
MOSFET N-CH 100V 10A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 10A (Tc) 2.5W (Ta), 40W (Tc) Through Hole I-PAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
FQU13N10LTU Models
STANDARDPAKET

Technische Daten

Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
180mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
520 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 40W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
FQU13N10

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQU13N10LTU

Dokumente und Medien

Datasheets
1(FQD13N10L, FQU13N10L)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Jun/2022)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(Mult Dev Assembly Chg 20/Dec/2019)
PCN Packaging
()
EDA Models
1(FQU13N10LTU Models)

Menge Preis

-

Stellvertreter

Teil Nr. : DMN10H170SK3-13
Hersteller. : Diodes Incorporated
Verfügbare Menge. : 254,474
Einzelpreis. : $0.60000
Ersatztyp. : Similar
Teil Nr. : TSM900N10CH X0G
Hersteller. : Taiwan Semiconductor Corporation
Verfügbare Menge. : 0
Einzelpreis. : $0.27321
Ersatztyp. : Similar