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ChinaPMZ370UNE315
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PMZ370UNE315
BESCHREIBUNG
SMALL SIGNAL N-CHANNEL MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 900mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006-3
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
6,260
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
490mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id
1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.16 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
78 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
360mW (Ta), 2.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DFN1006-3
Package / Case
SC-101, SOT-883
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
NEXNXPPMZ370UNE315
2156-PMZ370UNE315
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PMZ370UNE315
Dokumente und Medien
Datasheets
1(PMZ370UNE)
HTML Datasheet
1(PMZ370UNE)
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Stellvertreter
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