English
Spain
Rusia
Italy
ChinaAPT30SCD65B
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APT30SCD65B
BESCHREIBUNG
DIODE SIL CARBIDE 650V 46A TO247
DETAILIERTE BESCHREIBUNG
Diode 650 V 46A Through Hole TO-247
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
46A
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 30 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
600 µA @ 650 V
Capacitance @ Vr, F
945pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-247-2
Supplier Device Package
TO-247
Operating Temperature - Junction
-55°C ~ 150°C
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080
Andere Namen
APT30SCD65B-ND
150-APT30SCD65B
Kategorie
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Microsemi Corporation APT30SCD65B
Dokumente und Medien
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 16/Oct/2017)
Menge Preis
-
Stellvertreter
-