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China2SA1689E-HM-AA
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SA1689E-HM-AA
BESCHREIBUNG
BIP PNP 50MA 300V
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 300 V 50 mA 70MHz 600 mW Through Hole 3-NP
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,268
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
50 mA
Voltage - Collector Emitter Breakdown (Max)
300 V
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1mA, 6V
Power - Max
600 mW
Frequency - Transition
70MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
3-NP
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
2156-2SA1689E-HM-AA
ONSONS2SA1689E-HM-AA
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SA1689E-HM-AA
Dokumente und Medien
Datasheets
1(2SA1371E-AE)
Menge Preis
QUANTITÄT: 1268
Einzelpreis: $0.24
Verpackung: Bulk
MinMultiplikator: 1268
Verpackung: Bulk
MinMultiplikator: 1268
Stellvertreter
-