Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
6A
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 6 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
50 µA @ 650 V
Capacitance @ Vr, F
150pF @ 5V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package
DPAK
Operating Temperature - Junction
-55°C ~ 175°C
Base Product Number
SICRD6650