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China2SC3956E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SC3956E
BESCHREIBUNG
NPN SILICON TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 200 V 200 mA 300MHz 1.3 W Through Hole TO-126ML
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,158
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
200 mA
Voltage - Collector Emitter Breakdown (Max)
200 V
Vce Saturation (Max) @ Ib, Ic
1V @ 3mA, 30mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 10V
Power - Max
1.3 W
Frequency - Transition
300MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126ML
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
ONSONS2SC3956E
2156-2SC3956E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SC3956E
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 1158
Einzelpreis: $0.26
Verpackung: Bulk
MinMultiplikator: 1158
Verpackung: Bulk
MinMultiplikator: 1158
Stellvertreter
-