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ChinaIRFHM8363TR2PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFHM8363TR2PBF
BESCHREIBUNG
MOSFET 2N-CH 30V 11A 8PQFN
DETAILIERTE BESCHREIBUNG
Mosfet Array 30V 11A 2.7W Surface Mount 8-PQFN-Dual (3.3x3.3)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
IRFHM8363TR2PBF Models
STANDARDPAKET
400
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
11A
Rds On (Max) @ Id, Vgs
14.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1165pF @ 10V
Power - Max
2.7W
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
8-PQFN-Dual (3.3x3.3)
Base Product Number
IRFHM8363
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRFHM8363TR2PBFTR
IRFHM8363TR2PBFDKR
SP001564106
IRFHM8363TR2PBFCT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies IRFHM8363TR2PBF
Dokumente und Medien
Datasheets
1(IRFHM8363PbF)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRFHM8363PbF)
EDA Models
1(IRFHM8363TR2PBF Models)
Simulation Models
1(IRFHM8363TR2PBF Saber Model)
Menge Preis
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