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ChinaR6515ENZC17
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
R6515ENZC17
BESCHREIBUNG
MOSFET N-CH 650V 15A TO3
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 15A (Tc) 60W (Tc) Through Hole TO-3PF
HERSTELLER
Rohm Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
Rohm Semiconductor
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
315mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id
4V @ 430µA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
910 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PF
Package / Case
TO-3P-3 Full Pack
Base Product Number
R6515
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor R6515ENZC17
Dokumente und Medien
Datasheets
1(R6515ENZ)
Product Training Modules
1(Industrial Motor Products: Part 1 - Power Devices/Gate Drivers)
Menge Preis
-
Stellvertreter
-