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ChinaSI5857DU-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI5857DU-T1-GE3
BESCHREIBUNG
MOSFET P-CH 20V 6A PPAK CHIPFET
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 6A (Tc) 2.3W (Ta), 10.4W (Tc) Surface Mount PowerPAK® ChipFET™ Single
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
LITTLE FOOT®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
58mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
480 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
2.3W (Ta), 10.4W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® ChipFET™ Single
Package / Case
PowerPAK® ChipFET™ Single
Base Product Number
SI5857
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI5857DU-T1-GE3
Dokumente und Medien
Datasheets
1(SI5857DU)
Menge Preis
-
Stellvertreter
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