English
Spain
Rusia
Italy
ChinaIRFHE4250DTRPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFHE4250DTRPBF
BESCHREIBUNG
MOSFET 2N-CH 25V 86A/303A 32QFN
DETAILIERTE BESCHREIBUNG
Mosfet Array 25V 86A (Tc), 303A (Tc) 156W (Tc) Surface Mount 32-PQFN (6x6)
HERSTELLER
International Rectifier
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
156
Lagerbestände
Technische Daten
Mfr
International Rectifier
Series
HEXFET®
Package
Bulk
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25°C
86A (Tc), 303A (Tc)
Rds On (Max) @ Id, Vgs
2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V
Vgs(th) (Max) @ Id
2.1V @ 35µA, 2.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
20nC @ 4.5V, 53nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1735pF @ 13V, 4765pF @ 13V
Power - Max
156W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
32-PowerVFQFN
Supplier Device Package
32-PQFN (6x6)
Base Product Number
IRFHE4250
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
2156-IRFHE4250DTRPBF
INFIRFIRFHE4250DTRPBF
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/International Rectifier IRFHE4250DTRPBF
Dokumente und Medien
Datasheets
1(IRFHE4250DTRPBF)
Menge Preis
QUANTITÄT: 156
Einzelpreis: $1.93
Verpackung: Bulk
MinMultiplikator: 156
Verpackung: Bulk
MinMultiplikator: 156
Stellvertreter
-