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ChinaSIZF914DT-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIZF914DT-T1-GE3
BESCHREIBUNG
MOSFET 2N-CH 25V 23.5A 8PWRPAIR
DETAILIERTE BESCHREIBUNG
Mosfet Array 25V 23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc) 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) Surface Mount 8-PowerPair® (6x5)
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
14 Weeks
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
PowerPAIR®, TrenchFET®
Package
Tape & Reel (TR)
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25°C
23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs
3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21nC @ 10V, 98nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1050pF @ 10V, 4670pF @ 10V
Power - Max
3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Supplier Device Package
8-PowerPair® (6x5)
Base Product Number
SIZF914
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SIZF914DT-T1-GE3
Dokumente und Medien
Datasheets
1(SIZF914DT)
PCN Assembly/Origin
1(Mult Dev Wafer Process 09/Jan/2024)
HTML Datasheet
1(SIZF914DT)
Menge Preis
QUANTITÄT: 9000
Einzelpreis: $0.64975
Verpackung: Tape & Reel (TR)
MinMultiplikator: 6000
Verpackung: Tape & Reel (TR)
MinMultiplikator: 6000
QUANTITÄT: 6000
Einzelpreis: $0.672
Verpackung: Tape & Reel (TR)
MinMultiplikator: 6000
Verpackung: Tape & Reel (TR)
MinMultiplikator: 6000
Stellvertreter
-