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ChinaIPP80CN10NGXKSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPP80CN10NGXKSA1
BESCHREIBUNG
PFET, 13A I(D), 100V, 0.08OHM, 1
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 13A (Tc) 31W (Tc) Through Hole PG-TO220-3-123
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
649
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™ 2
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
80mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
716 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
31W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-123
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
2156-IPP80CN10NGXKSA1
INFINFIPP80CN10NGXKSA1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPP80CN10NGXKSA1
Dokumente und Medien
Datasheets
1(IPD78CN10NG Datasheet)
Menge Preis
QUANTITÄT: 649
Einzelpreis: $0.46
Verpackung: Bulk
MinMultiplikator: 649
Verpackung: Bulk
MinMultiplikator: 649
Stellvertreter
-