English
Spain
Rusia
Italy
ChinaGA10SICP12-263
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
GA10SICP12-263
BESCHREIBUNG
TRANS SJT 1200V 25A D2PAK
DETAILIERTE BESCHREIBUNG
1200 V 25A (Tc) 170W (Tc) Surface Mount TO-263-7
HERSTELLER
GeneSiC Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
GeneSiC Semiconductor
Series
-
Package
Tube
Product Status
Active
FET Type
-
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
100mOhm @ 10A
Vgs(th) (Max) @ Id
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
1403 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
170W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number
GA10SICP12
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
GA10SICP12-263-ND
1242-1318
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/GeneSiC Semiconductor GA10SICP12-263
Dokumente und Medien
Datasheets
1(GA10SICP12-263)
Menge Preis
QUANTITÄT: 500
Einzelpreis: $25.27424
Verpackung: Tube
MinMultiplikator: 500
Verpackung: Tube
MinMultiplikator: 500
Stellvertreter
-