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TEILNUMMER DES HERSTELLERS
IPI100N06S3L04XK
BESCHREIBUNG
MOSFET N-CH 55V 100A TO262-3
DETAILIERTE BESCHREIBUNG
N-Channel 55 V 100A (Tc) 214W (Tc) Through Hole PG-TO262-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
2.2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
362 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
17270 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
214W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI100N
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IPI100N06S3L-04-ND
IPI100N06S3L-04
IPI100N06S3L-04IN
IPI100N06S3L04X
SP000102211
IPI100N06S3L-04IN-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI100N06S3L04XK
Dokumente und Medien
Datasheets
1(IPB/IPI/IPP100N06S3L-04)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPB/IPI/IPP100N06S3L-04)
Menge Preis
QUANTITÄT: 10
Einzelpreis: $1.097
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $1.28
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-