Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
BSO083N03MSG
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 11A (Ta) 1.56W (Ta) Surface Mount PG-DSO-8
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,154

Technische Daten

Mfr
Infineon Technologies
Series
OptiMOS™ 3
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.3mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2100 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.56W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-DSO-8
Package / Case
8-SOIC (0.154", 3.90mm Width)

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

2156-BSO083N03MSG
IFEINFBSO083N03MSG

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSO083N03MSG

Dokumente und Medien

Datasheets
1(Datasheet)

Menge Preis

QUANTITÄT: 1154
Einzelpreis: $0.26
Verpackung: Bulk
MinMultiplikator: 1154

Stellvertreter

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