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ChinaFDB8870
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDB8870
BESCHREIBUNG
MOSFET N-CH 30V 23A/160A TO263AB
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 23A (Ta), 160A (Tc) 160W (Tc) Surface Mount TO-263 (D2PAK)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
270
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
23A (Ta), 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.9mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
132 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5200 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
160W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
ONSONSFDB8870
2156-FDB8870
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDB8870
Dokumente und Medien
Datasheets
1(FDB8870 Datasheet)
Menge Preis
QUANTITÄT: 270
Einzelpreis: $1.11
Verpackung: Bulk
MinMultiplikator: 270
Verpackung: Bulk
MinMultiplikator: 270
Stellvertreter
-