Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPW60R024P7XKSA1
BESCHREIBUNG
MOSFET N-CH 650V 101A TO247-3-41
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 101A (Tc) 291W (Tc) Through Hole PG-TO247-3-41
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
26 Weeks
EDACAD-MODELL
IPW60R024P7XKSA1 Models
STANDARDPAKET
30

Technische Daten

Mfr
Infineon Technologies
Series
CoolMOS™ P7
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
101A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
24mOhm @ 42.4A, 10V
Vgs(th) (Max) @ Id
4V @ 2.03mA
Gate Charge (Qg) (Max) @ Vgs
164 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7144 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
291W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41
Package / Case
TO-247-3
Base Product Number
IPW60R024

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

448-IPW60R024P7XKSA1
SP001866180

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPW60R024P7XKSA1

Dokumente und Medien

Datasheets
1(IPW60R024P7)
Environmental Information
1(RoHS Certificate)
HTML Datasheet
1(IPW60R024P7)
EDA Models
1(IPW60R024P7XKSA1 Models)

Menge Preis

QUANTITÄT: 1020
Einzelpreis: $8.07444
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 510
Einzelpreis: $8.80296
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 120
Einzelpreis: $9.71358
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 30
Einzelpreis: $10.32067
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $12.75
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

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