Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
FQU3N60TU
BESCHREIBUNG
MOSFET N-CH 600V 2.4A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 2.4A (Tc) 2.5W (Ta), 50W (Tc) Through Hole IPAK
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
544

Technische Daten

Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
450 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

2156-FQU3N60TU-FS
FAIFSCFQU3N60TU

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQU3N60TU

Dokumente und Medien

Datasheets
1(FQU3N60TU)

Menge Preis

QUANTITÄT: 544
Einzelpreis: $0.55
Verpackung: Tube
MinMultiplikator: 544

Stellvertreter

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