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ChinaFQPF9N30
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQPF9N30
BESCHREIBUNG
MOSFET N-CH 300V 6A TO220F
DETAILIERTE BESCHREIBUNG
N-Channel 300 V 6A (Tc) 42W (Tc) Through Hole TO-220F-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
398
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
300 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
450mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
740 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
42W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FQPF9N30-FS
FAIFSCFQPF9N30
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQPF9N30
Dokumente und Medien
Datasheets
1(FQPF9N30)
Menge Preis
QUANTITÄT: 398
Einzelpreis: $0.75
Verpackung: Tube
MinMultiplikator: 398
Verpackung: Tube
MinMultiplikator: 398
Stellvertreter
-