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Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SGSD100
BESCHREIBUNG
TRANS NPN DARL 80V 25A TO247-3
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN - Darlington 80 V 25 A 130 W Through Hole TO-247-3
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
-
Package
Tube
Product Status
Obsolete
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
25 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
3.5V @ 80mA, 20A
Current - Collector Cutoff (Max)
500µA
DC Current Gain (hFE) (Min) @ Ic, Vce
500 @ 10A, 3V
Power - Max
130 W
Frequency - Transition
-
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Base Product Number
SGSD100
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SGSD100-ND
497-6727-5
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/STMicroelectronics SGSD100
Dokumente und Medien
Datasheets
1(SGSDx00)
HTML Datasheet
1(SGSDx00)
Menge Preis
-
Stellvertreter
Teil Nr. : 2STW100
Hersteller. : STMicroelectronics
Verfügbare Menge. : 246
Einzelpreis. : $2.88000
Ersatztyp. : Direct
Verfügbare Menge. : 246
Einzelpreis. : $2.88000
Ersatztyp. : Direct