Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SCT3080ALGC11
BESCHREIBUNG
SICFET N-CH 650V 30A TO247N
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 30A (Tc) 134W (Tc) Through Hole TO-247N
HERSTELLER
Rohm Semiconductor
STANDARD LEADTIME
35 Weeks
EDACAD-MODELL
STANDARDPAKET

Technische Daten

Mfr
Rohm Semiconductor
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
104mOhm @ 10A, 18V
Vgs(th) (Max) @ Id
5.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 18 V
Vgs (Max)
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
571 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
134W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247N
Package / Case
TO-247-3
Base Product Number
SCT3080

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor SCT3080ALGC11

Dokumente und Medien

Datasheets
()
Other Related Documents
()
Product Training Modules
1(Industrial Motor Products: Part 1 - Power Devices/Gate Drivers)
Video File
()
Environmental Information
()
Design Resources
1(TO-247N Inner Structure)
HTML Datasheet
()
Simulation Models
1(SCT3080AL Spice Model)
Reliability Documents
1(MOS-3GTHD Reliability Test)

Menge Preis

QUANTITÄT: 1020
Einzelpreis: $6.79023
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 510
Einzelpreis: $7.54471
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 120
Einzelpreis: $8.55067
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 30
Einzelpreis: $9.55667
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $11.97
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

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