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ChinaFDMD8900
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDMD8900
BESCHREIBUNG
MOSFET 2N-CH 30V 19A/17A 12POWER
DETAILIERTE BESCHREIBUNG
Mosfet Array 30V 19A, 17A 2.1W Surface Mount 12-Power3.3x5
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
19A, 17A
Rds On (Max) @ Id, Vgs
4mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
2605pF @ 15V
Power - Max
2.1W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
12-PowerWDFN
Supplier Device Package
12-Power3.3x5
Base Product Number
FDMD89
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2832-FDMD8900TR
FDMD8900TR
FDMD8900DKR
FDMD8900CT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/onsemi FDMD8900
Dokumente und Medien
Datasheets
1(FDMD8900)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 8/Apr/2021)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Packaging
1(Mult Devices 24/Oct/2017)
Menge Preis
-
Stellvertreter
-