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ChinaRFP8N18L
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RFP8N18L
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 180 V 8A (Tc) 60W (Tc) Through Hole TO-220AB
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
346
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
180 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
500mOhm @ 4A, 5V
Vgs(th) (Max) @ Id
2V @ 1mA
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
HARHARRFP8N18L
2156-RFP8N18L
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation RFP8N18L
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 346
Einzelpreis: $0.87
Verpackung: Bulk
MinMultiplikator: 346
Verpackung: Bulk
MinMultiplikator: 346
Stellvertreter
-