Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
BUK962R6-40E,118
BESCHREIBUNG
MOSFET N-CH 40V 100A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 100A (Tc) 263W (Tc) Surface Mount D2PAK
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
233

Technische Daten

Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
2.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
80.6 nC @ 32 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
10285 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
263W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Umweltverträgliche Exportklassifikationen

ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

NEXNXPBUK962R6-40E,118
2156-BUK962R6-40E,118

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. BUK962R6-40E,118

Dokumente und Medien

Datasheets
1(BUK962R6-40E,118 Datasheet)

Menge Preis

QUANTITÄT: 233
Einzelpreis: $1.29
Verpackung: Bulk
MinMultiplikator: 233

Stellvertreter

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