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China2SB1030A
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TEILNUMMER DES HERSTELLERS
2SB1030A
BESCHREIBUNG
TRANS PNP 50V 0.5A NS-B1
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 50 V 500 mA 120MHz 300 mW Through Hole NS-B1
HERSTELLER
Panasonic Electronic Components
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
5,000
Lagerbestände
Technische Daten
Mfr
Panasonic Electronic Components
Series
-
Package
Tape & Box (TB)
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
600mV @ 30mA, 300mA
Current - Collector Cutoff (Max)
1µA
DC Current Gain (hFE) (Min) @ Ic, Vce
85 @ 150mA, 10V
Power - Max
300 mW
Frequency - Transition
120MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
3-SIP
Supplier Device Package
NS-B1
Base Product Number
2SB1030
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2SB1030A0A
2SB1030ACT
2SB1030A-(TA)
2SB1030ATB
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Panasonic Electronic Components 2SB1030A
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Datasheets
1(2SB1030ARA Datasheet)
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1(Wearables Technology Components)
HTML Datasheet
1(2SB1030ARA Datasheet)
Product Drawings
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Menge Preis
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