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ChinaFQPF6N60C
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQPF6N60C
BESCHREIBUNG
MOSFET N-CH 600V 5.5A TO220F
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 5.5A (Tc) 40W (Tc) Through Hole TO-220F-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
423
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
810 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
40W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FQPF6N60C-FS
FAIFSCFQPF6N60C
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQPF6N60C
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 423
Einzelpreis: $0.71
Verpackung: Tube
MinMultiplikator: 423
Verpackung: Tube
MinMultiplikator: 423
Stellvertreter
-