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ChinaBSC200P03LSG
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSC200P03LSG
BESCHREIBUNG
P-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
P-Channel 30 V 9.9A (Ta), 12.5A (Tc) 2.5W (Ta), 63W (Tc) Surface Mount PG-TDSON-8-6
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
693
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS®
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
9.9A (Ta), 12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
20mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id
1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
48.5 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
2430 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 63W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-6
Package / Case
8-PowerTDFN
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IFEINFBSC200P03LSG
2156-BSC200P03LSG
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSC200P03LSG
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 693
Einzelpreis: $0.43
Verpackung: Bulk
MinMultiplikator: 693
Verpackung: Bulk
MinMultiplikator: 693
Stellvertreter
-