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ChinaIXFN44N80Q3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXFN44N80Q3
BESCHREIBUNG
MOSFET N-CH 800V 37A SOT227B
DETAILIERTE BESCHREIBUNG
N-Channel 800 V 37A (Tc) 780W (Tc) Chassis Mount SOT-227B
HERSTELLER
IXYS
STANDARD LEADTIME
98 Weeks
EDACAD-MODELL
STANDARDPAKET
10
Lagerbestände
Technische Daten
Mfr
IXYS
Series
HiPerFET™, Q3 Class
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
185 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
9840 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
780W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC
Base Product Number
IXFN44
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFN44N80Q3
Dokumente und Medien
Datasheets
1(IXFN44N80Q3)
Environmental Information
1(Ixys IC REACH)
Featured Product
1(Q3-Class HiPerFET™ Power MOSFETs)
HTML Datasheet
1(IXFN44N80Q3)
Menge Preis
QUANTITÄT: 100
Einzelpreis: $49.9411
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 10
Einzelpreis: $55.49
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $61.04
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
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