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ChinaIRFH5110TR2PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFH5110TR2PBF
BESCHREIBUNG
MOSFET N-CH 100V 5X6 PQFN
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 11A (Ta), 63A (Tc) Surface Mount 8-PQFN (5x6)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
400
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs
12.4mOhm @ 37A, 10V
Vgs(th) (Max) @ Id
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3152 pF @ 25 V
FET Feature
-
Mounting Type
Surface Mount
Supplier Device Package
8-PQFN (5x6)
Package / Case
8-PowerVDFN
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SP001570790
IRFH5110TR2PBFCT
IRFH5110TR2PBFDKR
IRFH5110TR2PBFTR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFH5110TR2PBF
Dokumente und Medien
Datasheets
1(IRFH5110PBF)
Other Related Documents
1(Part Number Guide)
Environmental Information
1(PQFN 5x6 RoHS Compliance)
Featured Product
1(Data Processing Systems)
Simulation Models
1(IRFH5110TR2PBF Saber Model)
Menge Preis
-
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