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ChinaFDMC0202S
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDMC0202S
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR
DETAILIERTE BESCHREIBUNG
N-Channel 25 V 22.5A (Ta), 40A (Tc) 2.3W (Ta), 52W (Tc) Surface Mount 8-PQFN (3.3x3.3)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,210
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
22.5A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.15mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2705 pF @ 13 V
FET Feature
-
Power Dissipation (Max)
2.3W (Ta), 52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PQFN (3.3x3.3)
Package / Case
8-PowerTDFN
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FDMC0202S
FAIFSCFDMC0202S
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDMC0202S
Dokumente und Medien
Datasheets
1(FDMC0202S Datasheet)
Menge Preis
QUANTITÄT: 1210
Einzelpreis: $0.25
Verpackung: Bulk
MinMultiplikator: 1210
Verpackung: Bulk
MinMultiplikator: 1210
Stellvertreter
-