English
Spain
Rusia
Italy
ChinaIXFN80N60P3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXFN80N60P3
BESCHREIBUNG
MOSFET N-CH 600V 66A SOT-227B
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 66A (Tc) 960W (Tc) Chassis Mount SOT-227B
HERSTELLER
IXYS
STANDARD LEADTIME
43 Weeks
EDACAD-MODELL
STANDARDPAKET
10
Lagerbestände
Technische Daten
Mfr
IXYS
Series
HiPerFET™, Polar3™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
70mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
190 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
13100 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
960W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC
Base Product Number
IXFN80
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFN80N60P3
Dokumente und Medien
Datasheets
1(IXFN80N60P3)
Environmental Information
1(Ixys IC REACH)
HTML Datasheet
1(IXFN80N60P3)
Menge Preis
QUANTITÄT: 100
Einzelpreis: $28.6924
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 10
Einzelpreis: $32.805
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $36.92
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-