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ChinaWPB4002
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TEILNUMMER DES HERSTELLERS
WPB4002
BESCHREIBUNG
MOSFET N-CH 600V 23A TO3PB
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 23A (Ta) 2.5W (Ta), 220W (Tc) Through Hole TO-3PB
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
100
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tray
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
23A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
360mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
84 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2200 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 220W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PB
Package / Case
TO-3P-3, SC-65-3
Base Product Number
WPB40
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ONSONSWPB4002
2156-WPB4002
2156-WPB4002-ON
ONSSNYWPB4002
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi WPB4002
Dokumente und Medien
Environmental Information
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Menge Preis
-
Stellvertreter
Teil Nr. : IXTQ22N60P
Hersteller. : IXYS
Verfügbare Menge. : 112
Einzelpreis. : $7.01000
Ersatztyp. : Similar
Verfügbare Menge. : 112
Einzelpreis. : $7.01000
Ersatztyp. : Similar