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ChinaPSMN7R0-100ES,127
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PSMN7R0-100ES,127
BESCHREIBUNG
MOSFET N-CH 100V 100A I2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 100A (Tc) 269W (Tc) Through Hole I2PAK
HERSTELLER
Nexperia USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Nexperia USA Inc.
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
125 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6686 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
269W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
934064292127
PSMN7R0-100ES,127-ND
568-7516-5-ND
PSMN7R0100ES127
568-7516-5
1727-5897
2166-PSMN7R0-100ES,127-1727
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Nexperia USA Inc. PSMN7R0-100ES,127
Dokumente und Medien
Datasheets
1(PSMN7R0-100ES)
PCN Obsolescence/ EOL
()
PCN Packaging
()
HTML Datasheet
1(PSMN7R0-100ES)
Menge Preis
-
Stellvertreter
Teil Nr. : IPI045N10N3GXKSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 469
Einzelpreis. : $3.76000
Ersatztyp. : Similar
Verfügbare Menge. : 469
Einzelpreis. : $3.76000
Ersatztyp. : Similar