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TEILNUMMER DES HERSTELLERS
IPB80N06S4L05ATMA2
BESCHREIBUNG
MOSFET N-CH 60V 80A TO263-3
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 80A (Tc) 107W (Tc) Surface Mount PG-TO263-3-2
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
2.2V @ 60µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
8180 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
107W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB80N
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB80N06S4L05ATMA2
Dokumente und Medien
Datasheets
1(IPx80N06S4L-05)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Assembly/Origin
1(Mult Dev Wafer Fab 12/Feb/2019)
HTML Datasheet
1(IPx80N06S4L-05)
Menge Preis
-
Stellvertreter
Teil Nr. : IXFA230N075T2-7
Hersteller. : IXYS
Verfügbare Menge. : 45
Einzelpreis. : $6.73000
Ersatztyp. : Similar
Verfügbare Menge. : 45
Einzelpreis. : $6.73000
Ersatztyp. : Similar