English
Spain
Rusia
Italy
ChinaISL9N308AS3ST
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
ISL9N308AS3ST
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 75A (Tc) 100W (Tc) Surface Mount TO-263AB
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
370
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
UltraFET®
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
68 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2600 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263AB
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FAIFSCISL9N308AS3ST
2156-ISL9N308AS3ST
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor ISL9N308AS3ST
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 370
Einzelpreis: $0.81
Verpackung: Bulk
MinMultiplikator: 370
Verpackung: Bulk
MinMultiplikator: 370
Stellvertreter
-