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ChinaFDD3570
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDD3570
BESCHREIBUNG
MOSFET N-CH 80V 10A TO252
DETAILIERTE BESCHREIBUNG
N-Channel 80 V 10A (Ta) 3.4W (Ta), 69W (Tc) Surface Mount TO-252 (DPAK)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
513
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
20mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
76 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2800 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
3.4W (Ta), 69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FDD3570
FAIFSCFDD3570
2156-FDD3570-FSTR-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDD3570
Dokumente und Medien
Datasheets
1(FDD3570)
Menge Preis
QUANTITÄT: 513
Einzelpreis: $0.59
Verpackung: Bulk
MinMultiplikator: 513
Verpackung: Bulk
MinMultiplikator: 513
Stellvertreter
-