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ChinaHAT2266HWS-E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
HAT2266HWS-E
BESCHREIBUNG
MOSFET N-CH 60V 30A 5LFPAK
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 30A (Ta) 23W (Tc) Surface Mount LFPAK
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3600 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
23W (Tc)
Operating Temperature
150°C
Mounting Type
Surface Mount
Supplier Device Package
LFPAK
Package / Case
SC-100, SOT-669
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation HAT2266HWS-E
Dokumente und Medien
PCN Obsolescence/ EOL
1(Mult Dev EOL 15/Dec/2018)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
Menge Preis
-
Stellvertreter
-